CSD17581Q5AT - 30V N-CHANNEL NEXFET POWER MOSFE

Fabricant Nimewo Pati

CSD17581Q5AT

Entèn Nimewo Pati

ABC-CSD17581Q5AT

Fabricant

T-I

Kout Deskripsyon

30V N-CHANNEL NEXFET POWER MOSFE

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1111229 Pieces

referans pri

~~USD 0.29456~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen CSD17581Q5AT nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou CSD17581Q5AT

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : CSD17581Q5AT

Fabricant : T-I

Deskripsyon : 30V N-CHANNEL NEXFET POWER MOSFE

Seri : NexFET™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 24A (Ta), 123A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 3.4 mOhm @ 16A, 10V

Vgs (th) (Max) @ Id : 1.7V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 54nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 3640pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.1W (Ta), 83W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-VSONP (5x6)

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : CSD1 , CSD175

dokiman pou CSD17581Q5AT

Fich : CSD17581Q5AT.pdf

pwodwi ki gen rapò pou CSD17581Q5AT T-I

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