FDP8D5N10C - FET ENGR DEV-NOT REL

Fabricant Nimewo Pati

FDP8D5N10C

Entèn Nimewo Pati

ABC-FDP8D5N10C

Fabricant

ON Semiconductor

Kout Deskripsyon

FET ENGR DEV-NOT REL

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

279020 Pieces

referans pri

~~USD 1.17307~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FDP8D5N10C nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou FDP8D5N10C

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDP8D5N10C

Fabricant : ON Semiconductor

Deskripsyon : FET ENGR DEV-NOT REL

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 76A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 8.5 mOhm @ 76A, 10V

Vgs (th) (Max) @ Id : 4V @ 130µA

Chaje Gate (Qg) (Max) @ Vgs : 34nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2475pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.4W (Ta), 107W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220-3

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDP , FDP8D

dokiman pou FDP8D5N10C

Fich : FDP8D5N10C.pdf

pwodwi ki gen rapò pou FDP8D5N10C ON Semiconductor

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