TK2A65D(STA4,Q,M) - MOSFET N-CH 650V 2A TO-220SIS

Fabricant Nimewo Pati

TK2A65D(STA4,Q,M)

Entèn Nimewo Pati

ABC-TK2A65D(STA4,Q,M)

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 650V 2A TO-220SIS

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

562023 Pieces

referans pri

~~USD 0.5824~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TK2A65D(STA4,Q,M) nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TK2A65D(STA4,Q,M)

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TK2A65D(STA4,Q,M)

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 650V 2A TO-220SIS

Seri : π-MOSVII

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 3.26 Ohm @ 1A, 10V

Vgs (th) (Max) @ Id : 4.4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 9nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 380pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 30W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220SIS

Pake / Ka : TO-220-3 Full Pack

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TK2A6 , TK2A65D(

dokiman pou TK2A65D(STA4,Q,M)

Fich : TK2A65D(STA4,Q,M).pdf

pwodwi ki gen rapò pou TK2A65D(STA4,Q,M) Toshiba Semiconductor and Storage

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