FDI3632 - MOSFET N-CH 100V 80A TO-262AB

Fabricant Nimewo Pati

FDI3632

Entèn Nimewo Pati

ABC-FDI3632

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 80A TO-262AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

110896 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FDI3632 nan stock pou vann.

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Espesifikasyon pou FDI3632

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDI3632

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 80A TO-262AB

Seri : PowerTrench®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta), 80A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 9 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 110nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 6000pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 310W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I2PAK (TO-262)

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD , FDI

dokiman pou FDI3632

Fich : FDI3632.pdf

pwodwi ki gen rapò pou FDI3632 ON Semiconductor

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