FDP4D5N10C - FET ENGR DEV-NOT REL

Fabricant Nimewo Pati

FDP4D5N10C

Entèn Nimewo Pati

ABC-FDP4D5N10C

Fabricant

ON Semiconductor

Kout Deskripsyon

FET ENGR DEV-NOT REL

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

207272 Pieces

referans pri

~~USD 1.80469~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FDP4D5N10C nan stock pou vann.

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Espesifikasyon pou FDP4D5N10C

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDP4D5N10C

Fabricant : ON Semiconductor

Deskripsyon : FET ENGR DEV-NOT REL

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 128A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 4.5 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 4V @ 310µA

Chaje Gate (Qg) (Max) @ Vgs : 68nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 5065pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.4W (Ta), 150W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220-3

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDP , FDP4D

dokiman pou FDP4D5N10C

Fich : FDP4D5N10C.pdf

pwodwi ki gen rapò pou FDP4D5N10C ON Semiconductor

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