C2M0280120D - MOSFET N-CH 1200V 10A TO-247-3

Fabricant Nimewo Pati

C2M0280120D

Entèn Nimewo Pati

ABC-C2M0280120D

Fabricant

Cree/Wolfspeed

Kout Deskripsyon

MOSFET N-CH 1200V 10A TO-247-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

131248 Pieces

referans pri

~~USD 2.85~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen C2M0280120D nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou C2M0280120D

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : C2M0280120D

Fabricant : Cree/Wolfspeed

Deskripsyon : MOSFET N-CH 1200V 10A TO-247-3

Seri : Z-FET™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : SiCFET (Silicon Carbide)

Drenaj nan Voltage Sous (Vdss) : 1200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 20V

RD sou (Max) @ Id, Vgs : 370 mOhm @ 6A, 20V

Vgs (th) (Max) @ Id : 2.8V @ 1.25mA (Typ)

Chaje Gate (Qg) (Max) @ Vgs : 20.4nC @ 20V

Vgs (Max) : +25V, -10V

Antre kapasite (Ciss) (Max) @ Vds : 259pF @ 1000V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 62.5W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247-3

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : C2M , C2M02

dokiman pou C2M0280120D

Fich : C2M0280120D.pdf

pwodwi ki gen rapò pou C2M0280120D Cree/Wolfspeed

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