FQD8P10TM - MOSFET P-CH 100V 6.6A DPAK

Fabricant Nimewo Pati

FQD8P10TM

Entèn Nimewo Pati

ABC-FQD8P10TM

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET P-CH 100V 6.6A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1625764 Pieces

referans pri

~~USD 0.201335~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FQD8P10TM nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou FQD8P10TM

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQD8P10TM

Fabricant : ON Semiconductor

Deskripsyon : MOSFET P-CH 100V 6.6A DPAK

Seri : QFET®

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.6A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 530 mOhm @ 3.3A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 470pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta), 44W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D-Pak

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQD , FQD8

dokiman pou FQD8P10TM

Fich : FQD8P10TM.pdf

pwodwi ki gen rapò pou FQD8P10TM ON Semiconductor

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