STH275N8F7-2AG - MOSFET N-CH 80V 180A H2PAK-2

Fabricant Nimewo Pati

STH275N8F7-2AG

Entèn Nimewo Pati

ABC-STH275N8F7-2AG

Fabricant

STMicroelectronics

Kout Deskripsyon

MOSFET N-CH 80V 180A H2PAK-2

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

230734 Pieces

referans pri

~~USD 1.4186~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen STH275N8F7-2AG nan stock pou vann.

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Espesifikasyon pou STH275N8F7-2AG

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : STH275N8F7-2AG

Fabricant : STMicroelectronics

Deskripsyon : MOSFET N-CH 80V 180A H2PAK-2

Seri : Automotive, AEC-Q101, STripFET™ F7

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 80V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 2.1 mOhm @ 90A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 193nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 13600pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 315W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : H2Pak-2

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : STH2 , STH275N

dokiman pou STH275N8F7-2AG

Fich : STH275N8F7-2AG.pdf

pwodwi ki gen rapò pou STH275N8F7-2AG STMicroelectronics

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