LSIC1MO120E0080 - MOSFET SIC 1200V 39A TO247-3

Fabricant Nimewo Pati

LSIC1MO120E0080

Entèn Nimewo Pati

ABC-LSIC1MO120E0080

Fabricant

Littelfuse Inc.

Kout Deskripsyon

MOSFET SIC 1200V 39A TO247-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

61386 Pieces

referans pri

~~USD 9.9~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen LSIC1MO120E0080 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou LSIC1MO120E0080

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : LSIC1MO120E0080

Fabricant : Littelfuse Inc.

Deskripsyon : MOSFET SIC 1200V 39A TO247-3

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : SiCFET (Silicon Carbide)

Drenaj nan Voltage Sous (Vdss) : 1200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 39A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 20V

RD sou (Max) @ Id, Vgs : 100 mOhm @ 20A, 20V

Vgs (th) (Max) @ Id : 4V @ 10mA

Chaje Gate (Qg) (Max) @ Vgs : 95nC @ 20V

Vgs (Max) : +22V, -6V

Antre kapasite (Ciss) (Max) @ Vds : 1825pF @ 800V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 179W (Tc)

Operating Tanperati : -55°C ~ 150°C

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247-3

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : LSIC1 , LSIC1MO

dokiman pou LSIC1MO120E0080

Fich : LSIC1MO120E0080.pdf

pwodwi ki gen rapò pou LSIC1MO120E0080 Littelfuse Inc.

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