SSM6K217FE,LF - MOSFET N-CH 40V 1.8A ES6

Fabricant Nimewo Pati

SSM6K217FE,LF

Entèn Nimewo Pati

ABC-SSM6K217FE,LF

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 40V 1.8A ES6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

6612620 Pieces

referans pri

~~USD 0.0495~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SSM6K217FE,LF nan stock pou vann.

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Espesifikasyon pou SSM6K217FE,LF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SSM6K217FE,LF

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 40V 1.8A ES6

Seri : U-MOSVII-H

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 8V

RD sou (Max) @ Id, Vgs : 195 mOhm @ 1A, 8V

Vgs (th) (Max) @ Id : 1.2V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 1.1nC @ 4.2V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 130pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 500mW (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : ES6

Pake / Ka : SOT-563, SOT-666

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SSM6 , SSM6K2

dokiman pou SSM6K217FE,LF

Fich : SSM6K217FE,LF.pdf

pwodwi ki gen rapò pou SSM6K217FE,LF Toshiba Semiconductor and Storage

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