FQPF19N10L - MOSFET N-CH 100V 13.6A TO-220F

Fabricant Nimewo Pati

FQPF19N10L

Entèn Nimewo Pati

ABC-FQPF19N10L

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 13.6A TO-220F

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

112560 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FQPF19N10L nan stock pou vann.

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Espesifikasyon pou FQPF19N10L

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQPF19N10L

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 13.6A TO-220F

Seri : QFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13.6A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 100 mOhm @ 6.8A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 870pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 38W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220F

Pake / Ka : TO-220-3 Full Pack

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQP , FQPF1

dokiman pou FQPF19N10L

Fich : FQPF19N10L.pdf

pwodwi ki gen rapò pou FQPF19N10L ON Semiconductor

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