MMIX1F160N30T - MOSFET N-CH 300V 102A SMPD

Fabricant Nimewo Pati

MMIX1F160N30T

Entèn Nimewo Pati

ABC-MMIX1F160N30T

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 300V 102A SMPD

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

92224 Pieces

referans pri

~~USD 16.21525~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen MMIX1F160N30T nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou MMIX1F160N30T

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : MMIX1F160N30T

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 300V 102A SMPD

Seri : GigaMOS™, HiperFET™, TrenchT2™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 300V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 102A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 20 mOhm @ 60A, 10V

Vgs (th) (Max) @ Id : 5V @ 8mA

Chaje Gate (Qg) (Max) @ Vgs : 335nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2800pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 570W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 24-SMPD

Pake / Ka : 24-PowerSMD, 21 Leads

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : MMIX , MMIX1F

dokiman pou MMIX1F160N30T

Fich : MMIX1F160N30T.pdf

pwodwi ki gen rapò pou MMIX1F160N30T IXYS

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