BSM180C12P2E202 - BSM180C12P2E202 IS A SIC SILICO

Fabricant Nimewo Pati

BSM180C12P2E202

Entèn Nimewo Pati

ABC-BSM180C12P2E202

Fabricant

Rohm Semiconductor

Kout Deskripsyon

BSM180C12P2E202 IS A SIC SILICO

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

59084 Pieces

referans pri

~~USD 283.5~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen BSM180C12P2E202 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BSM180C12P2E202

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSM180C12P2E202

Fabricant : Rohm Semiconductor

Deskripsyon : BSM180C12P2E202 IS A SIC SILICO

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : SiC (Silicon Carbide Junction Transistor)

Drenaj nan Voltage Sous (Vdss) : 1200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 204A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 4V @ 35.2mA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : +22V, -6V

Antre kapasite (Ciss) (Max) @ Vds : 20000pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1360W (Tc)

Operating Tanperati : 175°C (TJ)

Mounting Kalite : Chassis Mount

Pake Aparèy Founisè : Module

Pake / Ka : Module

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSM18 , BSM180C

dokiman pou BSM180C12P2E202

Fich : BSM180C12P2E202.pdf

pwodwi ki gen rapò pou BSM180C12P2E202 Rohm Semiconductor

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