VI20120SG-E3/4W - DIODE SCHOTTKY 120V 20A TO262AA

Fabricant Nimewo Pati

VI20120SG-E3/4W

Entèn Nimewo Pati

ABC-VI20120SG-E3/4W

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE SCHOTTKY 120V 20A TO262AA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

839776 Pieces

referans pri

~~USD 0.38977~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen VI20120SG-E3/4W nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou VI20120SG-E3/4W

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : VI20120SG-E3/4W

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE SCHOTTKY 120V 20A TO262AA

Seri : -

Estati Pati : Active

Kalite dyòd : Schottky

Voltage - DC Ranvèse (Vr) (Max) : 120V

Kouran - Mwayèn Rèktifye (Io) : 20A

Voltage - Forward (Vf) (Max) @ Si : 1.33V @ 20A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 250µA @ 120V

Kapasite @ Vr, F : -

Mounting Kalite : Through Hole

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pake Aparèy Founisè : TO-262AA

Operating Tanperati - Junction : -40°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : VI201 , VI20120

dokiman pou VI20120SG-E3/4W

Fich : VI20120SG-E3/4W.pdf

pwodwi ki gen rapò pou VI20120SG-E3/4W Vishay Semiconductor Diodes Division

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