NTLJD3182FZTBG - MOSFET P-CH 20V 2.2A 6-WDFN

Fabricant Nimewo Pati

NTLJD3182FZTBG

Entèn Nimewo Pati

ABC-NTLJD3182FZTBG

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET P-CH 20V 2.2A 6-WDFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

46053 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen NTLJD3182FZTBG nan stock pou vann.

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Espesifikasyon pou NTLJD3182FZTBG

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NTLJD3182FZTBG

Fabricant : ON Semiconductor

Deskripsyon : MOSFET P-CH 20V 2.2A 6-WDFN

Seri : -

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.2A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 100 mOhm @ 2A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 7.8nC @ 4.5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 450pF @ 10V

Karakteristik FET : Schottky Diode (Isolated)

Disipasyon Pouvwa (Max) : 710mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 6-WDFN (2x2)

Pake / Ka : 6-WDFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NTLJ , NTLJD31

dokiman pou NTLJD3182FZTBG

Fich : NTLJD3182FZTBG.pdf

pwodwi ki gen rapò pou NTLJD3182FZTBG ON Semiconductor

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