VP2206N3-G-P003 - MOSFET P-CH 60V 640MA TO92-3

Fabricant Nimewo Pati

VP2206N3-G-P003

Entèn Nimewo Pati

ABC-VP2206N3-G-P003

Fabricant

Microchip Technology

Kout Deskripsyon

MOSFET P-CH 60V 640MA TO92-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

423710 Pieces

referans pri

~~USD 0.7725~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen VP2206N3-G-P003 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou VP2206N3-G-P003

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : VP2206N3-G-P003

Fabricant : Microchip Technology

Deskripsyon : MOSFET P-CH 60V 640MA TO92-3

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 640mA (Tj)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 900 mOhm @ 3.5A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 10mA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 450pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 740mW (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-92-3

Pake / Ka : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : VP220 , VP2206N

dokiman pou VP2206N3-G-P003

Fich : VP2206N3-G-P003.pdf

pwodwi ki gen rapò pou VP2206N3-G-P003 Microchip Technology

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