TPS1120DR - MOSFET 2P-CH 15V 1.17A 8-SOIC

Fabricant Nimewo Pati

TPS1120DR

Entèn Nimewo Pati

ABC-TPS1120DR

Fabricant

T-I

Kout Deskripsyon

MOSFET 2P-CH 15V 1.17A 8-SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

722722 Pieces

referans pri

~~USD 0.4529~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TPS1120DR nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TPS1120DR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TPS1120DR

Fabricant : T-I

Deskripsyon : MOSFET 2P-CH 15V 1.17A 8-SOIC

Seri : -

Estati Pati : Active

FET Kalite : 2 P-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 15V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.17A

RD sou (Max) @ Id, Vgs : 180 mOhm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 5.45nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : -

Pouvwa - Max : 840mW

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SOIC

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TPS , TPS1

dokiman pou TPS1120DR

Fich : TPS1120DR.pdf

pwodwi ki gen rapò pou TPS1120DR T-I

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