RQ6E085BNTCR - NCH 30V 8.5A MIDDLE POWER MOSFET

Fabricant Nimewo Pati

RQ6E085BNTCR

Entèn Nimewo Pati

ABC-RQ6E085BNTCR

Fabricant

Rohm Semiconductor

Kout Deskripsyon

NCH 30V 8.5A MIDDLE POWER MOSFET

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1962961 Pieces

referans pri

~~USD 0.16675~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen RQ6E085BNTCR nan stock pou vann.

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Espesifikasyon pou RQ6E085BNTCR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RQ6E085BNTCR

Fabricant : Rohm Semiconductor

Deskripsyon : NCH 30V 8.5A MIDDLE POWER MOSFET

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 14.4 mOhm @ 8.5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 32.7nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1350pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.25W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-457

Pake / Ka : SC-74, SOT-457

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RQ6E , RQ6E08

dokiman pou RQ6E085BNTCR

Fich : RQ6E085BNTCR.pdf

pwodwi ki gen rapò pou RQ6E085BNTCR Rohm Semiconductor

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