SQ3985EV-T1_GE3 - MOSFET 2 P-CH 20V 3.9A 6TSOP

Fabricant Nimewo Pati

SQ3985EV-T1_GE3

Entèn Nimewo Pati

ABC-SQ3985EV-T1_GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2 P-CH 20V 3.9A 6TSOP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2413894 Pieces

referans pri

~~USD 0.1356~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SQ3985EV-T1_GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SQ3985EV-T1_GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SQ3985EV-T1_GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2 P-CH 20V 3.9A 6TSOP

Seri : Automotive, AEC-Q101, TrenchFET®

Estati Pati : Active

FET Kalite : 2 P-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.9A (Tc)

RD sou (Max) @ Id, Vgs : 145 mOhm @ 2.8A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 4.6nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 350pF @ 10V

Pouvwa - Max : 3W

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : SOT-23-6 Thin, TSOT-23-6

Pake Aparèy Founisè : 6-TSOP

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SQ398 , SQ3985E

dokiman pou SQ3985EV-T1_GE3

Fich : SQ3985EV-T1_GE3.pdf

pwodwi ki gen rapò pou SQ3985EV-T1_GE3 Vishay Siliconix

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