HGT1S10N120BNST - IGBT 1200V 35A 298W TO263AB

Fabricant Nimewo Pati

HGT1S10N120BNST

Entèn Nimewo Pati

ABC-HGT1S10N120BNST

Fabricant

ON Semiconductor

Kout Deskripsyon

IGBT 1200V 35A 298W TO263AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

363083 Pieces

referans pri

~~USD 0.90148~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen HGT1S10N120BNST nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou HGT1S10N120BNST

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : HGT1S10N120BNST

Fabricant : ON Semiconductor

Deskripsyon : IGBT 1200V 35A 298W TO263AB

Seri : -

Estati Pati : Active

Kalite IGBT : NPT

Voltage - Pèseptè ki emèt deba (Max) : 1200V

Kouran - Pèseptè (Ic) (Max) : 35A

Kouran - Pèseptè batman (Icm) : 80A

Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 10A

Pouvwa - Max : 298W

Oblije chanje enèji : 320µJ (on), 800µJ (off)

Kalite Antre : Standard

Gate chaje : 100nC

Td (on / off) @ 25 ° C : 23ns/165ns

Kondisyon egzamen an : 960V, 10A, 10 Ohm, 15V

Ranvèse Tan Reverse (trr) : -

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pake Aparèy Founisè : TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : HGT1S , HGT1S10

dokiman pou HGT1S10N120BNST

Fich : HGT1S10N120BNST.pdf

pwodwi ki gen rapò pou HGT1S10N120BNST ON Semiconductor

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