SI8902AEDB-T2-E1 - N-CHANNEL 24-V D-S MOSFET

Fabricant Nimewo Pati

SI8902AEDB-T2-E1

Entèn Nimewo Pati

ABC-SI8902AEDB-T2-E1

Fabricant

Vishay Siliconix

Kout Deskripsyon

N-CHANNEL 24-V D-S MOSFET

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1948240 Pieces

referans pri

~~USD 0.16801~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SI8902AEDB-T2-E1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SI8902AEDB-T2-E1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI8902AEDB-T2-E1

Fabricant : Vishay Siliconix

Deskripsyon : N-CHANNEL 24-V D-S MOSFET

Seri : TrenchFET®

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 24V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A

RD sou (Max) @ Id, Vgs : 28 mOhm @ 1A, 4.5V

Vgs (th) (Max) @ Id : 900mV @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : -

Antre kapasite (Ciss) (Max) @ Vds : -

Pouvwa - Max : 5.7W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 6-UFBGA

Pake Aparèy Founisè : 6-Micro Foot™ (1.5x1)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI890 , SI8902AE

dokiman pou SI8902AEDB-T2-E1

Fich : SI8902AEDB-T2-E1.pdf

pwodwi ki gen rapò pou SI8902AEDB-T2-E1 Vishay Siliconix

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