DMT10H017LPD-13 - MOSFET BVDSS 61V-100V POWERDI50

Fabricant Nimewo Pati

DMT10H017LPD-13

Entèn Nimewo Pati

ABC-DMT10H017LPD-13

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET BVDSS 61V-100V POWERDI50

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

797104 Pieces

referans pri

~~USD 0.41064~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen DMT10H017LPD-13 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou DMT10H017LPD-13

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : DMT10H017LPD-13

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET BVDSS 61V-100V POWERDI50

Seri : Automotive, AEC-Q101

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 54.7A (Tc)

RD sou (Max) @ Id, Vgs : 17.4 mOhm @ 17A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 28.6nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 1986pF @ 50V

Pouvwa - Max : 2.2W (Ta), 78W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-PowerTDFN

Pake Aparèy Founisè : PowerDI5060-8

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : DMT10 , DMT10H0

dokiman pou DMT10H017LPD-13

Fich : DMT10H017LPD-13.pdf

pwodwi ki gen rapò pou DMT10H017LPD-13 Diodes Incorporated

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