NTMFS4H02NFT1G - MOSFET N-CH 25V 37A SO8FL

Fabricant Nimewo Pati

NTMFS4H02NFT1G

Entèn Nimewo Pati

ABC-NTMFS4H02NFT1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 25V 37A SO8FL

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Plon gratis / RoHS Konfòm

akouchman Tan

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Espesifikasyon pou NTMFS4H02NFT1G

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Nimewo pati : NTMFS4H02NFT1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 25V 37A SO8FL

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 25V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 37A (Ta), 193A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 1.4 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 40.9nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2652pF @ 12V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.13W (Ta), 83W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NTMF , NTMFS4H

dokiman pou NTMFS4H02NFT1G

Fich : NTMFS4H02NFT1G.pdf

pwodwi ki gen rapò pou NTMFS4H02NFT1G ON Semiconductor

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