TK18E10K3,S1X(S - MOSFET N-CH 100V 18A TO-220AB

Fabricant Nimewo Pati

TK18E10K3,S1X(S

Entèn Nimewo Pati

ABC-TK18E10K3,S1X(S

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 100V 18A TO-220AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

552720 Pieces

referans pri

~~USD 0.5922~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TK18E10K3,S1X(S nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TK18E10K3,S1X(S

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TK18E10K3,S1X(S

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 100V 18A TO-220AB

Seri : U-MOSIV

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : 42 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : 33nC @ 10V

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : -

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220-3

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TK18E , TK18E10

dokiman pou TK18E10K3,S1X(S

Fich : TK18E10K3,S1X(S.pdf

pwodwi ki gen rapò pou TK18E10K3,S1X(S Toshiba Semiconductor and Storage

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