FDD2612 - MOSFET N-CH 200V 4.9A D-PAK

Fabricant Nimewo Pati

FDD2612

Entèn Nimewo Pati

ABC-FDD2612

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 200V 4.9A D-PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

110688 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FDD2612 nan stock pou vann.

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Espesifikasyon pou FDD2612

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDD2612

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 200V 4.9A D-PAK

Seri : PowerTrench®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.9A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 720 mOhm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 234pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 42W (Ta)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD , FDD

dokiman pou FDD2612

Fich : FDD2612.pdf

pwodwi ki gen rapò pou FDD2612 ON Semiconductor

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