RUC002N05HZGT116 - 1.2V DRIVE NCH MOSFET

Fabricant Nimewo Pati

RUC002N05HZGT116

Entèn Nimewo Pati

ABC-RUC002N05HZGT116

Fabricant

Rohm Semiconductor

Kout Deskripsyon

1.2V DRIVE NCH MOSFET

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

18975355 Pieces

referans pri

~~USD 0.01725~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen RUC002N05HZGT116 nan stock pou vann.

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Espesifikasyon pou RUC002N05HZGT116

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RUC002N05HZGT116

Fabricant : Rohm Semiconductor

Deskripsyon : 1.2V DRIVE NCH MOSFET

Seri : Automotive, AEC-Q101

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 50V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 200mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.2V, 4.5V

RD sou (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 1V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 25pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 350mW (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SST3

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RUC00 , RUC002N0

dokiman pou RUC002N05HZGT116

Fich : RUC002N05HZGT116.pdf

pwodwi ki gen rapò pou RUC002N05HZGT116 Rohm Semiconductor

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