UGB12JT-E3/81 - DIODE GEN PURP 600V 12A TO263AB

Fabricant Nimewo Pati

UGB12JT-E3/81

Entèn Nimewo Pati

ABC-UGB12JT-E3/81

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 600V 12A TO263AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

65439 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen UGB12JT-E3/81 nan stock pou vann.

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Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou UGB12JT-E3/81

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : UGB12JT-E3/81

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 600V 12A TO263AB

Seri : -

Estati Pati : Obsolete

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 12A

Voltage - Forward (Vf) (Max) @ Si : 1.75V @ 12A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 50ns

Kouran - Fèy Reverse @ Vr : 30µA @ 600V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pake Aparèy Founisè : TO-263AB

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : UGB1 , UGB12J

dokiman pou UGB12JT-E3/81

Fich : UGB12JT-E3/81.pdf

pwodwi ki gen rapò pou UGB12JT-E3/81 Vishay Semiconductor Diodes Division

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