TSM60NB190CF C0G - MOSFET N-CH 600V 18A ITO220S

Fabricant Nimewo Pati

TSM60NB190CF C0G

Entèn Nimewo Pati

ABC-TSM60NB190CF C0G

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

MOSFET N-CH 600V 18A ITO220S

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

250810 Pieces

referans pri

~~USD 1.305~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TSM60NB190CF C0G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TSM60NB190CF C0G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TSM60NB190CF C0G

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : MOSFET N-CH 600V 18A ITO220S

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 190 mOhm @ 3.7A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 32nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1311pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 59.5W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : ITO-220S

Pake / Ka : TO-220-3 Full Pack

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TSM60 , TSM60NB1

dokiman pou TSM60NB190CF C0G

Fich : TSM60NB190CF C0G.pdf

pwodwi ki gen rapò pou TSM60NB190CF C0G Taiwan Semiconductor Corporation

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