FF8MR12W2M1B11BOMA1 - MOSFET MODULE 1200V 150A

Fabricant Nimewo Pati

FF8MR12W2M1B11BOMA1

Entèn Nimewo Pati

ABC-FF8MR12W2M1B11BOMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET MODULE 1200V 150A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

59300 Pieces

referans pri

~~USD 122.715~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FF8MR12W2M1B11BOMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou FF8MR12W2M1B11BOMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FF8MR12W2M1B11BOMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET MODULE 1200V 150A

Seri : CoolSiC™

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Silicon Carbide (SiC)

Drenaj nan Voltage Sous (Vdss) : 1200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 150A (Tj)

RD sou (Max) @ Id, Vgs : 7.5 mOhm @ 150A, 15V (Typ)

Vgs (th) (Max) @ Id : 5.55V @ 60mA

Chaje Gate (Qg) (Max) @ Vgs : 372nC @ 15V

Antre kapasite (Ciss) (Max) @ Vds : 11000pF @ 800V

Pouvwa - Max : 20mW (Tc)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake / Ka : Module

Pake Aparèy Founisè : AG-EASY2BM-2

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FF8MR1 , FF8MR12W2

dokiman pou FF8MR12W2M1B11BOMA1

Fich : FF8MR12W2M1B11BOMA1.pdf

pwodwi ki gen rapò pou FF8MR12W2M1B11BOMA1 Infineon Technologies

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