FDB16AN08A0 - MOSFET N-CH 75V 58A TO-263AB

Fabricant Nimewo Pati

FDB16AN08A0

Entèn Nimewo Pati

ABC-FDB16AN08A0

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 75V 58A TO-263AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

519897 Pieces

referans pri

~~USD 0.62959~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FDB16AN08A0 nan stock pou vann.

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Espesifikasyon pou FDB16AN08A0

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDB16AN08A0

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 75V 58A TO-263AB

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 75V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Ta), 58A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 16 mOhm @ 58A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 42nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1857pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 135W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDB , FDB16

dokiman pou FDB16AN08A0

Fich : FDB16AN08A0.pdf

pwodwi ki gen rapò pou FDB16AN08A0 ON Semiconductor

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