APTC80H29T1G - MOSFET 4N-CH 800V 15A SP1

Fabricant Nimewo Pati

APTC80H29T1G

Entèn Nimewo Pati

ABC-APTC80H29T1G

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET 4N-CH 800V 15A SP1

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

50297 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen APTC80H29T1G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou APTC80H29T1G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : APTC80H29T1G

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET 4N-CH 800V 15A SP1

Seri : -

Estati Pati : Obsolete

FET Kalite : 4 N-Channel (H-Bridge)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A

RD sou (Max) @ Id, Vgs : 290 mOhm @ 7.5A, 10V

Vgs (th) (Max) @ Id : 3.9V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 90nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 2254pF @ 25V

Pouvwa - Max : 156W

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake / Ka : SP1

Pake Aparèy Founisè : SP1

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : APTC , APTC80

dokiman pou APTC80H29T1G

Fich : APTC80H29T1G.pdf

pwodwi ki gen rapò pou APTC80H29T1G Microsemi Corporation

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