TSM048NB06LCR RLG - MOSFET SINGLE N-CHANNEL TRENCH

Fabricant Nimewo Pati

TSM048NB06LCR RLG

Entèn Nimewo Pati

ABC-TSM048NB06LCR RLG

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

MOSFET SINGLE N-CHANNEL TRENCH

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

999152 Pieces

referans pri

~~USD 0.3276~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TSM048NB06LCR RLG nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TSM048NB06LCR RLG

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TSM048NB06LCR RLG

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : MOSFET SINGLE N-CHANNEL TRENCH

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Ta), 107A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 4.8 mOhm @ 16A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 105nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 6253pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.1W (Ta), 136W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-PDFN (5x6)

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TSM04 , TSM048NB

dokiman pou TSM048NB06LCR RLG

Fich : TSM048NB06LCR RLG.pdf

pwodwi ki gen rapò pou TSM048NB06LCR RLG Taiwan Semiconductor Corporation

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