FDC6506P - MOSFET 2P-CH 30V 1.8A SSOT6

Fabricant Nimewo Pati

FDC6506P

Entèn Nimewo Pati

ABC-FDC6506P

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET 2P-CH 30V 1.8A SSOT6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2703813 Pieces

referans pri

~~USD 0.12106~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FDC6506P nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou FDC6506P

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDC6506P

Fabricant : ON Semiconductor

Deskripsyon : MOSFET 2P-CH 30V 1.8A SSOT6

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : 2 P-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.8A

RD sou (Max) @ Id, Vgs : 170 mOhm @ 1.8A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 3.5nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 190pF @ 15V

Pouvwa - Max : 700mW

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : SOT-23-6 Thin, TSOT-23-6

Pake Aparèy Founisè : SuperSOT™-6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD , FDC6

dokiman pou FDC6506P

Fich : FDC6506P.pdf

pwodwi ki gen rapò pou FDC6506P ON Semiconductor

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