SI1424EDH-T1-GE3 - MOSFET N-CH 20V 4A SOT-363

Fabricant Nimewo Pati

SI1424EDH-T1-GE3

Entèn Nimewo Pati

ABC-SI1424EDH-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 20V 4A SOT-363

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

4883620 Pieces

referans pri

~~USD 0.067025~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SI1424EDH-T1-GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SI1424EDH-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI1424EDH-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 20V 4A SOT-363

Seri : TrenchFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V

RD sou (Max) @ Id, Vgs : 33 mOhm @ 5A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 8V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.56W (Ta), 2.8W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-363

Pake / Ka : 6-TSSOP, SC-88, SOT-363

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI142 , SI1424ED

dokiman pou SI1424EDH-T1-GE3

Fich : SI1424EDH-T1-GE3.pdf

pwodwi ki gen rapò pou SI1424EDH-T1-GE3 Vishay Siliconix

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