APTM120H29FG - MOSFET 4N-CH 1200V 34A SP6

Fabricant Nimewo Pati

APTM120H29FG

Entèn Nimewo Pati

ABC-APTM120H29FG

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET 4N-CH 1200V 34A SP6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

59334 Pieces

referans pri

~~USD 112.43815~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen APTM120H29FG nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou APTM120H29FG

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : APTM120H29FG

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET 4N-CH 1200V 34A SP6

Seri : POWER MOS 7®

Estati Pati : Active

FET Kalite : 4 N-Channel (H-Bridge)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 1200V (1.2kV)

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 34A

RD sou (Max) @ Id, Vgs : 348 mOhm @ 17A, 10V

Vgs (th) (Max) @ Id : 5V @ 5mA

Chaje Gate (Qg) (Max) @ Vgs : 374nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 10300pF @ 25V

Pouvwa - Max : 780W

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake / Ka : SP6

Pake Aparèy Founisè : SP6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : APTM , APTM12

dokiman pou APTM120H29FG

Fich : APTM120H29FG.pdf

pwodwi ki gen rapò pou APTM120H29FG Microsemi Corporation

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