APTML20UM18R010T1AG - MOSFET N-CH 200V 109A SP1

Fabricant Nimewo Pati

APTML20UM18R010T1AG

Entèn Nimewo Pati

ABC-APTML20UM18R010T1AG

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET N-CH 200V 109A SP1

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

71424 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen APTML20UM18R010T1AG nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou APTML20UM18R010T1AG

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : APTML20UM18R010T1AG

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET N-CH 200V 109A SP1

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 109A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 19 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 4V @ 2.5mA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 9880pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 480W (Tc)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake Aparèy Founisè : SP1

Pake / Ka : SP1

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : APTML2 , APTML20UM

dokiman pou APTML20UM18R010T1AG

Fich : APTML20UM18R010T1AG.pdf

pwodwi ki gen rapò pou APTML20UM18R010T1AG Microsemi Corporation

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