DMG6602SVTX-7 - MOSFET BVDSS 25V-30V TSOT26 TR

Fabricant Nimewo Pati

DMG6602SVTX-7

Entèn Nimewo Pati

ABC-DMG6602SVTX-7

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET BVDSS 25V-30V TSOT26 TR

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

5414801 Pieces

referans pri

~~USD 0.06045~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen DMG6602SVTX-7 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou DMG6602SVTX-7

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : DMG6602SVTX-7

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET BVDSS 25V-30V TSOT26 TR

Seri : Automotive, AEC-Q101

Estati Pati : Active

FET Kalite : N and P-Channel Complementary

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.4A (Ta), 2.8A (Ta)

RD sou (Max) @ Id, Vgs : 60 mOhm @ 3.1A, 10V, 95 mOhm @ 2.7A, 10V

Vgs (th) (Max) @ Id : 2.3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 10V, 9nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 400pF @ 15V, 420pF @ 15V

Pouvwa - Max : 840mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : SOT-23-6 Thin, TSOT-23-6

Pake Aparèy Founisè : TSOT-26

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : DMG6 , DMG660

dokiman pou DMG6602SVTX-7

Fich : DMG6602SVTX-7.pdf

pwodwi ki gen rapò pou DMG6602SVTX-7 Diodes Incorporated

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