IPP80R1K4P7XKSA1 - MOSFET N-CH 800V 4A TO220

Fabricant Nimewo Pati

IPP80R1K4P7XKSA1

Entèn Nimewo Pati

ABC-IPP80R1K4P7XKSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 800V 4A TO220

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

451472 Pieces

referans pri

~~USD 0.725~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen IPP80R1K4P7XKSA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IPP80R1K4P7XKSA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPP80R1K4P7XKSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 800V 4A TO220

Seri : CoolMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 1.4A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 70µA

Chaje Gate (Qg) (Max) @ Vgs : 10nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 250pF @ 500V

Karakteristik FET : Super Junction

Disipasyon Pouvwa (Max) : 32W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PG-TO220-3

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPP80 , IPP80R1K

dokiman pou IPP80R1K4P7XKSA1

Fich : IPP80R1K4P7XKSA1.pdf

pwodwi ki gen rapò pou IPP80R1K4P7XKSA1 Infineon Technologies

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