IHB2EB1R8M - IHB-2 1.8 20 EB E2

Fabricant Nimewo Pati

IHB2EB1R8M

Entèn Nimewo Pati

ABC-IHB2EB1R8M

Fabricant

Vishay Dale

Kout Deskripsyon

IHB-2 1.8 20 EB E2

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

84960 Pieces

referans pri

~~USD 4.403~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen IHB2EB1R8M nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IHB2EB1R8M

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IHB2EB1R8M

Fabricant : Vishay Dale

Deskripsyon : IHB-2 1.8 20 EB E2

Seri : IHB

Estati Pati : Active

Kalite : Wirewound

Materyèl - Nwayo : -

Enduktans : 1.8µH

Tolerans : ±20%

Kouran Rating : 17.4A

Kouran - Saturation : -

Pwoteksyon : Unshielded

DC rezistans (DCR) : 3 mOhm Max

Q @ Freq : -

Frekans - Self sonan : -

Evalyasyon : -

Operating Tanperati : -55°C ~ 130°C

Frekans Inductance - Egzamen : 1kHz

Karakteristik : -

Mounting Kalite : Through Hole

Pake / Ka : Radial

Pake Aparèy Founisè : -

Size / dimansyon : 0.825" Dia (20.96mm)

Wotè - chita (Max) : 0.840" (21.34mm)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IHB , IHB2E

dokiman pou IHB2EB1R8M

Fich : IHB2EB1R8M.pdf

pwodwi ki gen rapò pou IHB2EB1R8M Vishay Dale

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