HIP2101EIBT - IC DRVR HALF BRDG 100V 8EP-SOIC

Fabricant Nimewo Pati

HIP2101EIBT

Entèn Nimewo Pati

ABC-HIP2101EIBT

Fabricant

Renesas Electronics America Inc.

Kout Deskripsyon

IC DRVR HALF BRDG 100V 8EP-SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

70031 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen HIP2101EIBT nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou HIP2101EIBT

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : HIP2101EIBT

Fabricant : Renesas Electronics America Inc.

Deskripsyon : IC DRVR HALF BRDG 100V 8EP-SOIC

Seri : -

Estati Pati : Obsolete

Kondwi konte genyen : Half-Bridge

Kalite Chèn : Independent

Kantite Chofè yo : 2

Kalite Gate : N-Channel MOSFET

Voltage - Pwovizyon pou : 9V ~ 14V

Vòltaj lojik - VIL, VIH : 0.8V, 2.2V

Kouran - Peak Sòti (Sous, Lavabo) : 2A, 2A

Kalite Antre : Non-Inverting

Segondè Voltage Side - Max (Bootstrap) : 114V

Rise / Fall Time (Tip) : 10ns, 10ns

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Pake Aparèy Founisè : 8-SOIC-EP

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : HIP , HIP21

dokiman pou HIP2101EIBT

Fich : HIP2101EIBT.pdf

pwodwi ki gen rapò pou HIP2101EIBT Renesas Electronics America Inc.

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