SIHW23N60E-GE3 - MOSFET N-CH 600V 23A TO-247AD

Fabricant Nimewo Pati

SIHW23N60E-GE3

Entèn Nimewo Pati

ABC-SIHW23N60E-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 600V 23A TO-247AD

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

107392 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SIHW23N60E-GE3 nan stock pou vann.

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Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SIHW23N60E-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SIHW23N60E-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 600V 23A TO-247AD

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 23A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 158 mOhm @ 12A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 95nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2418pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 227W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247AD

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SIHW , SIHW23N

dokiman pou SIHW23N60E-GE3

Fich : SIHW23N60E-GE3.pdf

pwodwi ki gen rapò pou SIHW23N60E-GE3 Vishay Siliconix

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