IPC302N12N3X1SA1 - MOSFET N-CH 120V 1A SAWN ON FOIL

Fabricant Nimewo Pati

IPC302N12N3X1SA1

Entèn Nimewo Pati

ABC-IPC302N12N3X1SA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 120V 1A SAWN ON FOIL

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

234864 Pieces

referans pri

~~USD 1.592695~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen IPC302N12N3X1SA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IPC302N12N3X1SA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPC302N12N3X1SA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 120V 1A SAWN ON FOIL

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 120V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1A (Tj)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 100 mOhm @ 2A, 10V

Vgs (th) (Max) @ Id : 4V @ 275µA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : -

Operating Tanperati : -

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : Sawn on foil

Pake / Ka : Die

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPC30 , IPC302N1

dokiman pou IPC302N12N3X1SA1

Fich : IPC302N12N3X1SA1.pdf

pwodwi ki gen rapò pou IPC302N12N3X1SA1 Infineon Technologies

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