FDS86267P - MOSFET P-CH 150V

Fabricant Nimewo Pati

FDS86267P

Entèn Nimewo Pati

ABC-FDS86267P

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET P-CH 150V

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1002813 Pieces

referans pri

~~USD 0.326405~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FDS86267P nan stock pou vann.

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Espesifikasyon pou FDS86267P

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDS86267P

Fabricant : ON Semiconductor

Deskripsyon : MOSFET P-CH 150V

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 150V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.2A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 255 mOhm @ 2.2A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 10V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : 1130pF @ 75V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SOIC

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDS , FDS8

dokiman pou FDS86267P

Fich : FDS86267P.pdf

pwodwi ki gen rapò pou FDS86267P ON Semiconductor

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