SIZ320DT-T1-GE3 - MOSFET 2N-CH 25V 30/40A 8POWER33

Fabricant Nimewo Pati

SIZ320DT-T1-GE3

Entèn Nimewo Pati

ABC-SIZ320DT-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2N-CH 25V 30/40A 8POWER33

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1717289 Pieces

referans pri

~~USD 0.190605~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SIZ320DT-T1-GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SIZ320DT-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SIZ320DT-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2N-CH 25V 30/40A 8POWER33

Seri : PowerPAIR®, TrenchFET®

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 25V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc), 40A (Tc)

RD sou (Max) @ Id, Vgs : 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 8.9nC @ 4.5V, 11.9nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 660pF @ 12.5V, 1370pF @ 12.5V

Pouvwa - Max : 16.7W, 31W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-PowerWDFN

Pake Aparèy Founisè : 8-Power33 (3x3)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SIZ32 , SIZ320D

dokiman pou SIZ320DT-T1-GE3

Fich : SIZ320DT-T1-GE3.pdf

pwodwi ki gen rapò pou SIZ320DT-T1-GE3 Vishay Siliconix

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