RJK6032DPH-E0#T2 - MOSFET N-CH 600V 3A TO251

Fabricant Nimewo Pati

RJK6032DPH-E0#T2

Entèn Nimewo Pati

ABC-RJK6032DPH-E0#T2

Fabricant

Renesas Electronics America

Kout Deskripsyon

MOSFET N-CH 600V 3A TO251

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1278312 Pieces

referans pri

~~USD 0.25606~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen RJK6032DPH-E0#T2 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou RJK6032DPH-E0#T2

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RJK6032DPH-E0#T2

Fabricant : Renesas Electronics America

Deskripsyon : MOSFET N-CH 600V 3A TO251

Seri : -

Estati Pati : Last Time Buy

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 4.3 Ohm @ 1.5A, 10V

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : 9nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 285pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 40.3W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-251

Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RJK60 , RJK6032D

dokiman pou RJK6032DPH-E0#T2

Fich : RJK6032DPH-E0#T2.pdf

pwodwi ki gen rapò pou RJK6032DPH-E0#T2 Renesas Electronics America

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