GP2M012A080NG - MOSFET N-CH 800V 12A TO3PN

Fabricant Nimewo Pati

GP2M012A080NG

Entèn Nimewo Pati

ABC-GP2M012A080NG

Fabricant

Global Power Technologies Group

Kout Deskripsyon

MOSFET N-CH 800V 12A TO3PN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

84992 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen GP2M012A080NG nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou GP2M012A080NG

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : GP2M012A080NG

Fabricant : Global Power Technologies Group

Deskripsyon : MOSFET N-CH 800V 12A TO3PN

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 650 mOhm @ 6A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 79nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 3370pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 416W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-3PN

Pake / Ka : TO-3P-3, SC-65-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : GP2M , GP2M01

dokiman pou GP2M012A080NG

Fich : GP2M012A080NG.pdf

pwodwi ki gen rapò pou GP2M012A080NG Global Power Technologies Group

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