RT1A060APTR - MOSFET P-CH 12V 6A TSST8

Fabricant Nimewo Pati

RT1A060APTR

Entèn Nimewo Pati

ABC-RT1A060APTR

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET P-CH 12V 6A TSST8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

4541446 Pieces

referans pri

~~USD 0.072075~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen RT1A060APTR nan stock pou vann.

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Espesifikasyon pou RT1A060APTR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RT1A060APTR

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET P-CH 12V 6A TSST8

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V

RD sou (Max) @ Id, Vgs : 19 mOhm @ 6A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 80nC @ 4.5V

Vgs (Max) : -8V

Antre kapasite (Ciss) (Max) @ Vds : 7800pF @ 6V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 600mW (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-TSST

Pake / Ka : 8-SMD, Flat Lead

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RT1 , RT1A0

dokiman pou RT1A060APTR

Fich : RT1A060APTR.pdf

pwodwi ki gen rapò pou RT1A060APTR Rohm Semiconductor

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