TPCC8001-H(TE12LQM - MOSFET N-CH 30V 22A 8TSON

Fabricant Nimewo Pati

TPCC8001-H(TE12LQM

Entèn Nimewo Pati

ABC-TPCC8001-H(TE12LQM

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 30V 22A 8TSON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

39072 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TPCC8001-H(TE12LQM nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TPCC8001-H(TE12LQM

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TPCC8001-H(TE12LQM

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 30V 22A 8TSON

Seri : U-MOSV-H

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 8.3 mOhm @ 11A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 27nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2500pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 700mW (Ta), 30W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-TSON Advance (3.3x3.3)

Pake / Ka : 8-PowerVDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TPCC80 , TPCC8001-

dokiman pou TPCC8001-H(TE12LQM

Fich : TPCC8001-H(TE12LQM.pdf

pwodwi ki gen rapò pou TPCC8001-H(TE12LQM Toshiba Semiconductor and Storage

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