IXBT6N170 - IGBT 1700V 12A 75W TO268

Fabricant Nimewo Pati

IXBT6N170

Entèn Nimewo Pati

ABC-IXBT6N170

Fabricant

IXYS

Kout Deskripsyon

IGBT 1700V 12A 75W TO268

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

96544 Pieces

referans pri

~~USD 3.8745~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen IXBT6N170 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IXBT6N170

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IXBT6N170

Fabricant : IXYS

Deskripsyon : IGBT 1700V 12A 75W TO268

Seri : BIMOSFET™

Estati Pati : Active

Kalite IGBT : -

Voltage - Pèseptè ki emèt deba (Max) : 1700V

Kouran - Pèseptè (Ic) (Max) : 12A

Kouran - Pèseptè batman (Icm) : 36A

Vce (sou) (Max) @ Vge, Ic : 3.4V @ 15V, 6A

Pouvwa - Max : 75W

Oblije chanje enèji : -

Kalite Antre : Standard

Gate chaje : 17nC

Td (on / off) @ 25 ° C : -

Kondisyon egzamen an : -

Ranvèse Tan Reverse (trr) : 1.08µs

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Pake Aparèy Founisè : TO-268

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IXB , IXBT

dokiman pou IXBT6N170

Fich : IXBT6N170.pdf

pwodwi ki gen rapò pou IXBT6N170 IXYS

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