FDB8870 - MOSFET N-CH 30V 23A TO-263AB

Fabricant Nimewo Pati

FDB8870

Entèn Nimewo Pati

ABC-FDB8870

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 30V 23A TO-263AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

669389 Pieces

referans pri

~~USD 0.48899~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FDB8870 nan stock pou vann.

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Espesifikasyon pou FDB8870

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDB8870

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 30V 23A TO-263AB

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 23A (Ta), 160A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 3.9 mOhm @ 35A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 132nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 5200pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 160W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-263AB

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD , FDB

dokiman pou FDB8870

Fich : FDB8870.pdf

pwodwi ki gen rapò pou FDB8870 ON Semiconductor

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